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| SMG2305A -3.2A, -30V,RDS(ON) 80m[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product D A suffix of "-C" specifies halogen & lead-free Description The SMG2305A provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SMG2305A is universally preferred for all commercial industrial surface mount application and suited for low G S voltage applications such as DC/DC converters. SC-59 Features L A Drain Dim A B C D G H C J K Gate Source Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 * Simple drive requirement * Small package outline S 2 3 Top View B 1 Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System H D G J K L S Marking : 2305A All Dimension in mm Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -30 12 -3.2 -2.6 -10 1.38 0.01 -55~+150 Unit V V A A A W W/ C o o C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 90 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SMG2305A Elektronische Bauelemente -3.2A, -30V,RDS(ON) 80m[ P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 oC) o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. -30 _ Typ. _ Max. _ _ Unit V V/ V nA uA uA Test Condition VGS=0V, ID=-250uA Reference to 25 oC,ID=-1mA VDS=VGS, ID=-250uA VGS= 12V VDS=-30V,VGS=0 VDS=-24V,VGS=0 VGS=-10V, ID=-3.2A VGS=-4.5V, ID=-3A -0.1 _ _ _ _ _ _ -0.5 _ _ _ _ _ -1.2 100 -1 -25 60 80 150 250 Static Drain-Source On-Resistance 2 RDS(ON) _ _ _ _ m[ VGS=-2.5V, ID=-2A VGS=-1.8V, ID=-1A Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 2 Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ 10 1.8 3.6 7 15 21 15 735 100 80 9 18 _ _ _ nC ID=-3.2A VDS=-24V VGS=-4.5V _ _ _ _ _ _ _ VDS=-15V ID=-3.2A nS VGS=-10V RG=3.3[ RD=4.6 [ _ _ _ 1325 _ _ pF VGS=0V VDS=-25V f=1.0MHz _ _ S VDS=-5V, ID=-3A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time Reverse Recovery Charge Symbol VSD Trr Qrr Min. _ _ Typ. _ Max. -1.2 Unit V Test Condition IS=-1.2A, VGS=0V. Is=-3.2A,VGS=0V dl/dt=100A/uS 24 _ _ nS _ 19 nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SMG2305A -3.2A, -30V,RDS(ON) 80m[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SMG2305A Elektronische Bauelemente -3.2A, -30V,RDS(ON) 80m [ P-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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